| PART |
Description |
Maker |
| IRFD9210 |
-200V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-0.40A)
|
International Rectifier
|
| 2SJ404 2SJ405 2SK2163 |
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 6A I(D) | TO-220AB
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 40A I(D) | TO-220VAR 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 40A条（丁）|20VAR
|
EPCOS AG
|
| STD17NF03L-1 STD17NF03LT4 |
N-CHANNEL 30V 0.038 OHM 17A DPAK/IPAK STRIFET POWER MOSFET
N-CHANNEL POWER MOSFET
N-CHANNEL 30V - 0.038 - 17A - DPAK/IPAK STripFETII MOSFET
|
ST Microelectronics
意法半导
|
| SC160C SC265D4 SC265D3 SC265D5 SC129D FB150D8 SC16 |
THYRISTOR MODULE|TRIAC
TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/2
TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|400V V(DRM)|40A I(T)RMS|TO-208VAR1/4
TRIAC|400V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|150A I(T)RMS|TO-200AB
TRIAC|200V V(DRM)|150A I(T)RMS|TO-200AB
TRIAC|200V V(DRM)|25A I(T)RMS|TO-220
TRIAC|300V V(DRM)|25A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|25A I(T)RMS|TO-208VAR1/4
TRIAC|200V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|200V V(DRM)|25A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|25A I(T)RMS|TO-220
TRIAC|600V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|100A I(T)RMS|TO-200AB
TRIAC|400V V(DRM)|300A I(T)RMS|TO-200VAR50
FUSE 1A FA SMT 1206
TRIAC|200V V(DRM)|300A I(T)RMS|TO-200VAR50 可控硅| 200伏五（DRM）的| 300口（T）的有效值|00VAR50
TRIAC|800V V(DRM)|150A I(T)RMS|STF-M20 可控硅| 800V的五（DRM）的| 150A口（T）的有效值|培训基金- M20
TRIAC|600V V(DRM)|150A I(T)RMS|TO-200AB 可控硅| 600V的五（DRM）的| 150A口（T）的有效值|00AB
TRIAC|1.2KV V(DRM)|300A I(T)RMS|STF-M23 可控硅| 1.2KV五（DRM）的| 300口（T）的有效值|培训基金，一辆M23
TRIAC|600V V(DRM)|70A I(T)RMS|STF-M12 可控硅| 600V的五（DRM）的|0A口（T）的有效值|培训基金- M12
TRIAC|1.2KV V(DRM)|150A I(T)RMS|STF-M20 可控硅| 1.2KV五（DRM）的| 150A口（T）的有效值|培训基金- M20
TRIAC|200V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 200伏五（DRM）的| 50A条口（T）的有效值|08VARM8
|
Cornell Dubilier Electronics, Inc.
EPCOS AG
SIEMENS AG
|
| STB3020L 6474 |
CSED, FLANGE KIT 400A -通道30V 0.019ohm - 40A采用D2PAK STripFET]功率MOSFET
From old datasheet system
N - CHANNEL 30V - 0.019 - 40A - D 2 PAK STripFET TM POWER MOSFET
N - CHANNEL 30V - 0.019ohm - 40A - D2PAK STripFET] POWER MOSFET
N - CHANNEL 30V - 0.019W - 40A - D 2 PAK STripFET POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| MBR861 MBR862 MBR864 MBR866 |
Fast recovery power rectifier. 40A, 100V.
Fast recovery power rectifier. 40A, 200V.
Fast recovery power rectifier. 40A, 400V.
Fast recovery power rectifier. 40A, 600V.
|
Motorola
|
| Q6025G Q6025J6 Q6025K6 Q6025L5 Q6025L6 Q6025L9ALT |
TRIAC|600V V(DRM)|40A I(T)RMS|TO-208AA
TRIAC|600V V(DRM)|12A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 12A条口（T）的有效值|20
TRIAC|200V V(DRM)|40A I(T)RMS|TO-218 可控硅| 200伏五（DRM）的| 40A条口（T）的有效值|18
TRIAC|600V V(DRM)|12A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 12A条口T）的有效值|20
Transient Voltage Suppressor Diodes 可控硅| 200伏五（DRM）的| 5A条口（T）的有效值|20
TRIAC|600V V(DRM)|15A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 15A条口（T）的有效值|20
Transient Voltage Suppressor Diodes 可控硅| 400V五（DRM）的| 25A条口（T）的有效值|20
TRIAC|600V V(DRM)|4A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 4A条口（T）的有效值|20
Transient Voltage Suppressor Diodes 可控硅| 800V的五（DRM）的| 12A条口（T）的有效值|20
TRIAC|500V V(DRM)|4A I(T)RMS|TO-220 可控硅| 500V五（DRM）的| 4A条口T）的有效值|20
TRIAC|400V V(DRM)|3A I(T)RMS|TO-202 可控硅| 400V五（DRM）的| 3A条口（T）的有效值|02
TRIAC|400V V(DRM)|4A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 4A条口（T）的有效值|20
TRIAC|200V V(DRM)|12A I(T)RMS|TO-220 可控硅| 200伏五（DRM）的| 12A条口（T）的有效值|20
TRIAC|400V V(DRM)|12A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 12A条口（T）的有效值|20
TRIAC|400V V(DRM)|40A I(T)RMS|TO-218 可控硅| 400V五（DRM）的| 40A条口（T）的有效值|18
TRIAC|400V V(DRM)|10A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 10A条口（T）的有效值|20
TRIAC|600V V(DRM)|40A I(T)RMS|TO-218 可控硅| 600V的五（DRM）的| 40A条口（T）的有效值|18
TRIAC|800V V(DRM)|12A I(T)RMS|TO-220 可控硅| 800V的五（DRM）的| 12A条口（T）的有效值|20
THYRISTOR MODULE|TRIAC 晶闸管模块|可控
TRIAC|800V V(DRM)|15A I(T)RMS|TO-220 可控硅| 800V的五（DRM）的| 15A条口（T）的有效值|20
Transient Voltage Suppressor Diodes 可控硅| 200伏五（DRM）的| 8A条口（T）的有效值|20
TRIAC|400V V(DRM)|4A I(T)RMS|TO-202 可控硅| 400V五（DRM）的| 4A条口（T）的有效值|02
Transient Voltage Suppressor Diodes 可控硅| 400V五（DRM）的| 8A条口（T）的有效值|20
TRIAC|600V V(DRM)|8A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 8A条口（T）的有效值|20
TRIAC|200V V(DRM)|8A I(T)RMS|TO-220 可控硅| 200伏五（DRM）的| 8A条口（T）的有效值|20
TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 8A条口（T）的有效值|20
Transient Voltage Suppressor Diodes 可控硅| 700V的五（DRM）的| 25A条口（T）的有效值|20
可控硅| 200伏五（DRM）的| 10A条口（T）的有效值|20
TRIAC|300V V(DRM)|6A I(T)RMS|TO-220
TRIAC|600V V(DRM)|25A I(T)RMS|TO-39
TRIAC|600V V(DRM)|8A I(T)RMS|TO-202
TRIAC|500V V(DRM)|8A I(T)RMS|TO-202
TRIAC|200V V(DRM)|3A I(T)RMS|TO-202
TRIAC|500V V(DRM)|25A I(T)RMS|TO-220
TRIAC|200V V(DRM)|8A I(T)RMS|TO-202
TRIAC|600V V(DRM)|3A I(T)RMS|TO-220
TRIAC|400V V(DRM)|8A I(T)RMS|TO-202
TRIAC|800V V(DRM)|16A I(T)RMS|TO-220
TRIAC|600V V(DRM)|25A I(T)RMS|PRESS-13
TRIAC|500V V(DRM)|15A I(T)RMS|TO-3
TRIAC|500V V(DRM)|40A I(T)RMS|TO-218VAR
TRIAC|200V V(DRM)|10A I(T)RMS|TO-203AA
TRIAC|200V V(DRM)|15A I(T)RMS|TO-208AA
TRIAC|400V V(DRM)|10A I(T)RMS|TO-203AA
TRIAC|400V V(DRM)|10A I(T)RMS|FBASE-R-HW30
TRIAC|600V V(DRM)|10A I(T)RMS|FBASE-R-HW30
TRIAC|200V V(DRM)|10A I(T)RMS|FBASE-R-HW30
TRIAC|200V V(DRM)|10A I(T)RMS|TO-208AA
TRIAC|600V V(DRM)|10A I(T)RMS|TO-203AA
TRIAC|200V V(DRM)|20A I(T)RMS|TO-220
TRIAC|200V V(DRM)|6A I(T)RMS|TO-220
TRIAC|500V V(DRM)|25A I(T)RMS|TO-218VAR
TRIAC|600V V(DRM)|25A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|25A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|40A I(T)RMS|TO-218VAR
TRIAC|200V V(DRM)|40A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|10A I(T)RMS|TO-8
RF inductor, ceramic core, 5% tol, SMT, RoHS
TRIAC|400V V(DRM)|25A I(T)RMS|FBASE-R
TRIAC|600V V(DRM)|25A I(T)RMS|FBASE-R
TRIAC|500V V(DRM)|25A I(T)RMS|FBASE-R
TRIAC|200V V(DRM)|25A I(T)RMS|FBASE-R
TRIAC|600V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|15A I(T)RMS|TO-220
TRIAC|200V V(DRM)|15A I(T)RMS|TO-220
TRIAC|500V V(DRM)|8A I(T)RMS|TO-220
TRIAC|600V V(DRM)|25A I(T)RMS|TO-208AA
TRIAC|400V V(DRM)|40A I(T)RMS|TO-208AA
TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|500V V(DRM)|12A I(T)RMS|TO-220
TRIAC|200V V(DRM)|12A I(T)RMS|TO-220AB
TRIAC|400V V(DRM)|6A I(T)RMS|TO-220
TRIAC|600V V(DRM)|6A I(T)RMS|TO-220
TRIAC|700V V(DRM)|40A I(T)RMS|TO-218
TRIAC|200V V(DRM)|4A I(T)RMS|TO-220
TRIAC|600V V(DRM)|16A I(T)RMS|TO-220
TRIAC|600V V(DRM)|5A I(T)RMS|TO-220
TRIAC|200V V(DRM)|10A I(T)RMS|TO-220
TRIAC|600V V(DRM)|10A I(T)RMS|TO-220
TRIAC|600VV(DRM)|8AI(T)RMS|TO-220
TRIAC|600VV(DRM)|25AI(T)RMS|FBASE-R
TRIAC|600VV(DRM)|25AI(T)RMS|CAN
TRIAC|600VV(DRM)|25AI(T)RMS|TO-39
TRIAC|800VV(DRM)|25AI(T)RMS|TO-220AB
THYRISTORMODULE|TRIAC
TRIAC|600VV(DRM)|25AI(T)RMS|TO-220AB
TRIAC|600VV(DRM)|25AI(T)RMS|TO-220
TRIAC|600VV(DRM)|25AI(T)RMS|TO-218
TRIAC|600VV(DRM)|25AI(T)RMS|TO-218VAR
TRIAC|600VV(DRM)|25AI(T)RMS|PRESS-13
TRIAC|200V V(DRM)|25A I(T)RMS|TO-220
|
Samsung Semiconductor Co., Ltd.
Vishay Intertechnology, Inc.
STMicroelectronics N.V.
Xicon Passive Components
Anpec Electronics, Corp.
Littelfuse, Inc.
International Rectifier, Corp.
Motorola Mobility Holdings, Inc.
Electronic Theatre Controls, Inc.
Mitsubishi Electric, Corp.
Jiangsu Changjiang Electronics Technology Co., Ltd.
GTM, Corp.
|
| IRFP250 IRFP250B IRFP250BFP001 |
200V N-Channel B-FET / Substitute of IRFP250 & IRFP250A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQI32N20C FQB32N20C FQB32N20CTM |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET 28 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| STE40NC60 |
N-CHANNEL 600V 0.098 OHM 40A ISOTOP POWERMESH II POWER MOSFET
N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh⑩II MOSFET
N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh?II MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
